http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2490929-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_706d909f2118265a868a11b9c005121e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N5-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-671 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-33 |
| filingDate | 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6afebe8386eb07d59b43e13cefc05145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ca15063c681e34fb6e83d7acb0dd3dc |
| publicationDate | 2012-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2490929-A |
| titleOfInvention | Photodiode imaging arrays reconfigured or mapped via a non volatile memory |
| abstract | An infrared (IR) detector system comprises an infrared detecting diode array and a non volatile memory portion 1, formed from a CMOS silicon fuse (e.g. (anti-fuse; silicon fused carrier or SFC technology), the infrared sensor array be configurable via the non volatile, e.g. one-time-programmable (OTP) memory. A bypass function, allowing testing of (sub) pixel detector elements either individually or in combination, may be provided. Pixel or macro pixels may be configured by memory maps; thus, single equivalent sized detector element yield can be improved. Memory (map) data may be overridden for user control, and memory data polarity may retain user programming and detector deselection data. Also described is a method of suppressing defects in large area photodiode arrays, comprising: mapping a memory cell array to the diode array; mapping memory cells, one-to-one, with a sub pixel control switch, and connecting each sub pixel element to a user connection node, such that memory cell data controls the switch and the configuration / operation of connected pixel sensor elements. Defective sensor elements are thus deselected. |
| priorityDate | 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.