| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50 |
| filingDate |
2010-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b36da4b1a752c1c02e0552aca44e7542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9caca58bb7b38d5c3ec59712a1ec78a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a3d525fd4794a04daa752b759dc0299
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d90caf253bc7bbe51afc915197c0171d |
| publicationDate |
2014-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2487154-B |
| titleOfInvention |
Coaxial through-silicon via |
| abstract |
A method of fabricating a through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage. |
| priorityDate |
2009-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |