| abstract |
The contact is formed by depositing a nickel layer followed by a titanium, tungsten, or tantalum layer on the SiC substrate and annealing at a temperature of 600C or higher. The ohmic contact thus formed comprises a nickel suicide layer adjacent the substrate and a metal carbide layer adjacent the silicide layer. Segregated carbon, graphite and/or metal particles may be present in the contact. Further metallization layers may comprise barrier layers of platinum, tungsten or titanium-tungsten alloy and a gold or gold based solder layer. |