| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5334cecc424f8fed7cf939d83817a1d4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-3026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0504 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-22 |
| filingDate |
2005-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a064d4b145b7bbde17529cffc7ce1f26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51be708d1d12683635661abb1b2dc20e |
| publicationDate |
2005-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2412788-A |
| titleOfInvention |
Light emitting transistor and method |
| abstract |
A static induction light emitting transistor having an organic EL element structure and a vertical FET structure avoids a problem of the shielding of light and a problem of shielding of electric field by a gate electrode. In one example, the light emitting transistor 11 of a vertical FET structure has a substrate 12; a source electrode 13; a hole transporting layer 14 in which a slit-shaped gate electrode 15 is embedded; an equipotential layer 16; light emitting layer 17; and a transparent or semitransparent drain electrode 18, provided in this order. In this light emitting transistor, the drain electrode 18 provided on the opposite side of the gate electrode 15 to the light emitting layer 17 is transparent or semitransparent. Therefore, light generated in the light emitting layer 17 can be taken out from the drain electrode side. An electron transporting layer 19 can be provided between the light emitting layer 17 and the drain electrode 18. |
| priorityDate |
2004-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |