| abstract |
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors CFE from hydrogen diffusion in semiconductor devices 102, wherein nitrided aluminum oxide (N-AlOx) is formed over a ferroelectric capacitor CFE, and one or more silicon nitride layers 112, 117 are formed over the nitrided aluminum oxide (N-AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N-AlOx) is formed over the ferroelectric capacitors CFE, with two or more silicon nitride layers 112, 117 formed over the aluminum oxide (AlOx, N-AlOx), wherein the second silicon nitride layer 112 comprises a low silicon-hydrogen SiN material. |