| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c4483b7dcfa169d7ea8a61300461c0b4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate |
2003-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ea82c571ebbf89134513b91b1a9b9fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe5feb5aef5f73052ca1751c0c86bcfa |
| publicationDate |
2005-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2404785-A |
| titleOfInvention |
Field effect transistor with organic ferroelectric gate insulator |
| abstract |
A field effect transistor 1 comprises source and drain electrodes 6, 7 separated by a semiconductor body 5, and a gate electrode 3 separated from the semiconductor body 5 by a non-crystalline organic ferroelectric-like gate insulator 4. The semiconductor body 5 may comprise an organic or inorganic semiconductor material and the gate insulator 4 may be a polymer material. The device may be formed on a glass or plastic substrate 2 and is useful in non-volatile memory devices. The ferroelectric gate dielectric allows the voltage of an active matrix display transistor to be sustained without the use of a capacitor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106479373-A |
| priorityDate |
2003-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |