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filingDate 2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4482b83a5b731528774156c098ace4a0
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publicationDate 2004-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2395493-A
titleOfInvention Forming low K dielectric layers
abstract A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.
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