| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5b697aa5d3346981b6c6de88dcb0d50d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2002-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4ed8909e64b2cd367d707d03fdce2ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d59f99d6930d8dbad9d87fce01753217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bb51007f7a5377084d2f426c66a5635 |
| publicationDate |
2003-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2388959-A |
| titleOfInvention |
A semiconductor device barrier layer |
| abstract |
A barrier layer for a semiconductor device metallization component provides a silicon nitride film 29 formed in a component recess and a refractory metal film 30 formed over the silicon nitride film. The device component includes a dielectric material and a recess formed in the dielectric. The surface of the dielectric material within the recess is exposed to nitrogen under controlled parameters. A section of the dielectric material adjacent an interior of the recess is converted to silicon nitride. The refractory metal is then conformed deposited along the recess sidewalls. A seed layer 33 is then deposited over the refractory metal film, and a conductive metal 27 is then deposited within the recess. The device is then polished to remove excess metal outside the recess and planarize the device. |
| priorityDate |
2002-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |