| abstract |
A film structure includes low-k dielectric films 42, 18 and N-H base source films such as barrier layers films 6, etch stop films 30 and hard mask films 54. Interposed between the low-k dielectric film and adjacent N-H base film is a TEOS oxide film 12, 24, 36, 48 which suppresses the diffusion of amines or other N-H bases from the N-H base source film to the low-k dielectric film. The film structure may be patterned using DUV lithography and a chemically amplified photoresist 64, 74 since there are no base groups present in the low-k dielectric films to neutralize the acid catalysts in the chemically amplified photoresist. The dielectric structure can be used for forming dual damascene openings (90) which are filled with conductive material such as copper. |