http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2372630-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_079164d3674d9a26ec8fa6fba1a1683b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e08fd85d97265d6c31ab40f372843d81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14623 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 1989-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_001d4ec3165a0dfb40452892c4bebd65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ad20e6272ee4737313fdb76f84a03ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31fa669287475cd6afeb675774d03353 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98852c008a1954e119bf4cf464261605 |
| publicationDate | 2002-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2372630-A |
| titleOfInvention | Epitaxial passivation of group 2-6 infrared photodetectors |
| abstract | An array 1 of photodiodes 2 is comprised of a Group II-VI material, such as HgCdTe, which may be selectively doped to form a plurality of diode junctions. Array 1 is comprised of a plurality of photodiodes 2 which are disposed in a regular, two dimensional array. Incident IR radiation, which may be long wavelength, medium wavelength or short wavelength radiation, is incident upon a surface of the array 1. The array 1 comprises a radiation absorbing base layer 3 of Hg<SB>1-x</SB>Cd<SB>x</SB>Te semiconducting material, the value of x determining the responsivity of the array. Each of the photodiodes 2 is defined by a mesa structure, or cap layer 3; or the array 1 of photodiodes 2 may be a planar structure. Each of the photodiodes 2 is provided with an area of contact metallization upon a top surface thereof, the metallization serving to electrically couple an underlying photodiode to a readout device. The upper surface of the array 1 is provided with, in accordance with the invention, a passivation layer 5 comprised of an epitaxial layer of Group II-VI material which forms a heterostructure with the underlying Group II-VI material and which has a wider bandgap than the underlying Hg<SB>(1-x)</SB>Cd<SB>x</SB>Te, thereby beneficially repelling both holes and electrons from the diode junctions. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263264-B2 |
| priorityDate | 1988-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.