http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2368963-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13606 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2001-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ecc14471249d09eef97023ee62139e5 |
| publicationDate | 2002-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2368963-A |
| titleOfInvention | Liquid crystal display device array substrate and method of manufacturing the same |
| abstract | An array substrate for use in a liquid crystal display device includes a thin film transistor as a switching element, having a gate electrode, a source electrode and a drain electrode, wherein the gate electrode 115 is a portion of a gate line 113 near the crossing of the gate and data lines 113, 125, and has an inverted "T"-shaped opening or a rectangularly-shaped opening. The drain electrode 117 is shaped like the inverted "T"-shape and corresponds to the opening of the gate electrode 115. The source electrode 119 surrounds the drain electrode 117 along the steps of the semiconductor layer. Accordingly, in the thin film transistor having this structure, the gate electrode 115 is only overlapped by the edges of the drain electrode 117. And thus, the gate-drain parasitic capacitance is reduced and minimized. Also, variations in the gate-drain parasitic capacitance are prevented. As a result, a high resolution is achieved and the picture quality is improved in the liquid crystal display device. |
| priorityDate | 2000-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.