| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2000-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65544ca676a1d10701df8b6a62819736
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2aaf4a71ea84152743025bdbee631f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fafce203739889ecee48597e1819392c |
| publicationDate |
2001-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2362262-A |
| titleOfInvention |
Thin film transistor (TFT) with conductive channel which may be p-type or n-type in response to a gate voltage |
| abstract |
A microelectronic device comprises a substrate (102), which is patterned to form gate (101) which may be recessed, an insulating layer (105) formed on the gate and a conductive channel layer (120) adapted to provide dual channel (108) capable of acting as a p-channel or an n-channel in response to voltage from gate (101). The device may be a transistor with source (104) and drain (106) electrodes and trenches (112) isolating the device. The material of the channel layer (120) may be a Mott insulator material such as a cuprate or perovskite material, and may be YBa<SB>2</SB>Cu<SB>3</SB>O<SB>7-d</SB>. The gate layer may be strontium titanium oxide doped with niobium, and the insulating layer (105) may be strontium titanium oxide. A method of forming the device by forming the dual channel layer (120) from a cuprate material and annealing is also disclosed. Applications of the device as a rectifier and to drive a light emitting diode are also described. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1625625-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1625625-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1598860-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1715531-A1 |
| priorityDate |
2000-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |