http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2353293-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35
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filingDate 1999-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_759166aca934a8559a8d50c9c0ac2206
publicationDate 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2353293-A
titleOfInvention FeXN deposition process based on helicon sputtering
abstract A process for the deposition of FeXN (where X could be Ta, Mo, Zr, Al or some other unspecified material) with high saturation magnetic moment, as applied to magnetic storage media, is achieved using Helicon sputter deposition technology. This is achievable using either an iron or ceramic FeXN target material, yielding optimal control of deposited thin film properties.
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Total number of triples: 25.