| abstract |
A thin film transistor for an antistatic circuit, comprises wells formed on a Si substrate, insulating layers 72 for electrical isolation between electrodes formed within the wells, low density impurity diffused regions 73 respectively interposed between the insulating layers 72, a first high-density impurity diffused region 74 formed within one low-density region, a second high-density impurity diffused region formed within the other low-density region, inter-level insulating layers 75 formed on the insulating layers and the low-density regions, and metal gate electrodes 76 formed on the low-density regions and the inter-level insulating layers, at least one of the first high-density region and the second high-density region being arranged to overlap an active region 70, inward from outside edges of the active region. The circuit prevents junction leakage currents caused by electrostatic discharge (ESD). |