http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2298312-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2077 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2272 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| filingDate | 1996-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a49fb53b3c71ed568f003b20b49d4fa |
| publicationDate | 1996-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2298312-A |
| titleOfInvention | A method of making a double-heterostructure optical semiconductor device by the movpe method |
| abstract | A method of fabricating an optical semiconductor device, comprises the steps of: forming a plurality of growth-blocking masking regions 12 of silicon dioxide on a first conductivity type compound semiconductor substrate; ```forming a double-heterostructure 18 which comprises a first conductivity type cladding layer 14, a light absorption layer 15 and a second conductivity type cladding layer 17 on a mask-opening region by the metal organic vapour phase epitaxy method; ```partially removing said masking regions on both sides of said double-heterostructure and opposite sides thereof to provide opening regions; and ```forming a burying layer 20 on said-double heterostructure by the metal organic vapour phase epitaxy method. The method may be used to form a laser based on InGaAsP with InP cladding layers 14, 17. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0827243-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6134368-A |
| priorityDate | 1995-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 |
Total number of triples: 23.