http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2290412-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-5045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-20 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00 |
| filingDate | 1995-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23df35eb9273e54f142f853d82fb0c13 |
| publicationDate | 1995-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-2290412-A |
| titleOfInvention | Semi-conductor light emitting device, laser amplifier and intergrated light ampier and wavelength variable filter |
| abstract | A double heterojunction structure comprising an active layer (2), a cladding layer (3) having a first conductivity type, and a cladding layer (1) having a second conductivity type, which cladding layers (3, 1) sandwich the active layer (2), and an undoped cladding layer (4) interposed between the first conductivity type cladding layer (3) and the active layer (2), which undoped cladding layer (4) comprises the same material as the first conductivity type cladding layer (3) and has a thickness larger than the diffusion length of carriers in the undoped cladding layer (4). Therefore, carriers are accumulated in the undoped cladding layer (4) and then regularly injected into the active layer (2) by Coulomb repulsion between the carriers, resulting in a semiconductor light emitting device with reduced heat generation, reduced fluctuation of emitted laser light, and reduced noise. An alternative arrangement (Figure 8) uses instead two additional doped cladding layers (32, 36) separated by a distance greater than the carrier diffusion length. <IMAGE> |
| priorityDate | 1994-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.