http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2285337-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-185
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-18
filingDate 1994-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_863b40a02da21dd6542fe2e7a410bf6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58e8551231e78fa4220979c96240f1eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dc515c048fca8f9a488128d445fee0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf3e3bd364b816797e8e0e4cdbc8a412
publicationDate 1995-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2285337-A
titleOfInvention Manufacture of semiconductor device with aluminium wiring
abstract A strong tendency of exhibiting the (1 1 1) plane appears in an Al film sputtered on a substrate surface without heating the substrate intentionally, although the size of Al grains is small. Thereafter, in the midst of Al film deposition, the substrate is heated while continuing formation of the Al film. With this later process, the size of Al grains increases while inheriting the strong tendency of orientating the (1 1 1) plane, and a resistance to electromigration is improved. The Al film is patterned by using chlorine-based gas etchant and then heated in vacuum so that residual chlorine can be vaporized. Alternatively, the Al film is processed by silver nitrate or lead nitrate solution so that residual chlorine can be changed to inactive substrate which is soluble to ammonium hydroxide. The method is particularly applicable to making a DRAM wiring pattern 20, 23. <IMAGE>
priorityDate 1993-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0301565-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0499249-A2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23954
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5460490
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5352426
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415712843
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449391796
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546198
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID313
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25135
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520437
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452754495
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524915
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453057062
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9794626
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451110572
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID312
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453327643
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16212546
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID16683880
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527289
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557109
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24470
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559516
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419526230
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559517
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14923
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID10129950
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6373
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24459
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977

Total number of triples: 49.