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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-227
filingDate 1991-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab528f7c892f7d3043831300ace5760b
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_232cbc65828e282dd36a8385267eee0e
publicationDate 1992-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2253051-A
titleOfInvention Photoemission contaminant detection
abstract For determining the presence, and measuring the thickness of a contaminant layer on the surface of an electrically conductive material (33) such as a semiconductor, a metal or a metal silicide, a change in photoemission current from an illuminated spot on the surface is used to determine the presence and extent of a contaminant layer at the illuminated site (39). Compensation is provided for the effects of capacitive current and photovoltaic current. A pattern of illumination sites (39) on the surface of the conductor (33) can cover all points on the surface. <IMAGE>
priorityDate 1989-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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