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filingDate 1991-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1992-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2251722-A
titleOfInvention Method for forming multilevel interconnection in a semiconductor device
abstract The method comprises forming a first dielectric layer 22 over a first electrode layer 20, filling the re-entrant 40 by forming insulating material 100 on the first dielectric layer 22, laminating a second dielectric layer 26 on the first dielectric layer 22 and the insulating material 100, forming a via hole 50 by photolithography, forming an insulating layer 200 on the whole surface of the structure where the via hole 50 has been formed, anisotropically etching the insulating layer 200 so as to leave a spacer 200a on the side wall of the via hole 50, and depositing conductive material 28 to form a second electrode layer and the interconnexion. <IMAGE>
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Total number of triples: 31.