| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10ed6da739ce747c5acbf10148f3f851 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1365 |
| filingDate |
1987-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f4a31f0c693a5a328c08fa0408f761a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d88a9eb203e02a80e7ead56f3811aece |
| publicationDate |
1989-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
GB-2213987-A |
| titleOfInvention |
MIM devices and liquid crystal display devices incorporating such devices |
| abstract |
A MIM type device (24) suitable for use as a switching element for controlling an associated picture element (10) in an active matrix addressed display device having an array of liquid crystal picture elements (10) comprises two conductive layers (30, 34) and an intermediate layer of silicon oxy-nitride material (32) with a controlled funneling defect density leading to a non-linear resistive characteristic of the device in operation. The silicon oxy-nitride material is deposited using a plasma deposition process. <IMAGE> |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5466617-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0430702-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5428250-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0430702-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0417851-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2244858-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0417851-A3 |
| priorityDate |
1987-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |