Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08fe05872063aebd3b7c7664d6d1bb44 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4644 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
filingDate |
1986-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f783b8f16dee9bcfb0cf911cec32e9ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f9defcb9b9a8406156bb7bcf00c4019 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da01211f09a4ecddd47d2bc37286eaf7 |
publicationDate |
1987-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
GB-2180692-A |
titleOfInvention |
Via profiling in integrated circuits |
abstract |
A via is formed in an integrated circuit by depositing a curable dielectric film 13 over a conductor track 11, etching to define the via, and annealing the (uncured or partly cured) dielectric film 13 thereby flowing the dielectric to form a smoothly profiled cross-section adiacent the via and to cure, or complete the cure of, the dielectric. The dielectric may be partly cured before the etching step. The smooth profile reduces the risk of discontinuity in an upper metallisation layer. The dielectric may be a polyimide. <IMAGE> |
priorityDate |
1985-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |