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filingDate 1986-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1987-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2180692-A
titleOfInvention Via profiling in integrated circuits
abstract A via is formed in an integrated circuit by depositing a curable dielectric film 13 over a conductor track 11, etching to define the via, and annealing the (uncured or partly cured) dielectric film 13 thereby flowing the dielectric to form a smoothly profiled cross-section adiacent the via and to cure, or complete the cure of, the dielectric. The dielectric may be partly cured before the etching step. The smooth profile reduces the risk of discontinuity in an upper metallisation layer. The dielectric may be a polyimide. <IMAGE>
priorityDate 1985-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 24.