| abstract |
In a semiconductor crystal growth apparatus, a substrate (12) is heated in a growth vessel (1) evacuated to a ultrahigh vacuum, and gas (8, 9) containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from external gas sources. During growth, radiation having a specific wavelength is directed from an external irradiation source toward and onto the substrate from a source (14) which may be a laser or a lamp such as a mercury lamp, a xenon lamp or a heavy hydrogen lamp. The wavelength of the radiation is between 180 and 600 nm. <IMAGE> |