| abstract |
A semiconductor device, in which, in order to prevent both a wiring layer (81) including a bonding pad (6, 80) of aluminum and a bonding wire (10) from corroding, the aluminium material has formed on its surface an aluminum oxide film (90, 12, 13). In the semiconductor device disclosed, a first aluminum oxide film (90, 91) is formed on the surface of an upper aluminum wiring (80, 81) underlying a final passivation film (27), and a second aluminum oxide film (12,13) is formed on both an exposed surface of a bonding pad (80) and the surface of a bonding wire (10). In order to ensure the high quality of the second aluminum oxide film (12, 13), the materials of the bonding pad and the bonding wire are made to have an identical ionization tendency, or all leads are short-circuited when the oxidization for the second oxide film is conducted. In order that electrical connection to the bonding pad may not be broken during the oxidization of the second oxide film, moreover, the bonding pad is made to have a stacked construction of two aluminum layers (6, 80). <IMAGE> |