http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2085168-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-12
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12
filingDate 1981-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1982-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2085168-A
titleOfInvention Semiconductor gas sensor
abstract A Semiconductor gas sensor comprises an insulating substrate (11) on which a resistive heater track (15) coupled to a pair of electrodes (12, 14) is deposited. A film (16) of a semiconductive metal oxide, typically a doped oxide, is ion-plated on to the assembly so as to contact the resistive track (15) and a further electrode (13). Exposure of the device to a particular gas, e.g. hydrogen sulphide, reduces the resistivity of the semiconductive film (16), this change being detected via an amplifier circuit (not shown). In an alternative version of the sensor (Figures 5a, 5b and 6) the heater is disposed under a dielectric layer, the semiconductive film being ion-plated onto the dielectric layer and electrodes therein. <IMAGE>
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2142147-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0313390-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2137356-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10837935-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11513091-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019175566-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2302407-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5837886-A
priorityDate 1980-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.