| abstract |
The gate electrode of a MOS device comprises a layer 26 of a highly conductive material interposed between two polysilicon layers 14,18. This provides a gate electrode of reduced sheet resistivity. The highly conductive material may be a metal silicide formed by depositing a layer of a metal alloy or metal (eg Ti, Ta, W, Pt or Mo) on the first polysilicon layer 14, covering with the second polysilicon layer 18 and heating to react the metal with the polysilicon. Alternatively a metal silicide layer may be formed by direct deposition. <IMAGE> |