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filingDate 1979-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1981-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2055124-A
titleOfInvention Method and apparatus for vacuum deposition of semiconductor layers
abstract A method of vacuum deposition of semiconductor layers on a substrate consists in that a starting material is charged into evaporators (3) heated to a temperature below the boiling point of the starting material. The material is fed periodically by charging in succession each of the evaporators (3), charged amount of material being selected so as to provide uniform coating of the working surface of the evaporator (3) and to give complete evaporation of this amount during the period (T) up to the next charging operation. The number of evaporators (3) is a multiple of the number of main fractions in the starting material. Charging is suitably carried out at in the interval equal to T DIVIDED n for a period 10 - 15 times shorter than this interval. The material is usually evaporated simultaneously from all charged evaporators (3) with overlapping of the molecular flows in the condensation zone. The method can be used for development of homogeneous semiconductor layers of great length and width on a flexible substrate, the layers having a predetermined composition and being of fractioned material. <IMAGE>
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Total number of triples: 30.