http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1500208-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d835dca8d8e531bd25a6bf0b75f068b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03C1-705 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-705 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-02 |
| filingDate | 1975-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1978-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1500208-A |
| titleOfInvention | Method of manufacturing an article having a relief pattern of present configuration |
| abstract | 1500208 Etching INST POLUPROVODNIKOV AKAD NAUK UKRAINSKOI SSR 18 Dec 1975 51760/75 Heading B6J Irradiation of a structure comprising a metal layer 2, a barrier layer 3 and an inorganic layer 4 causes interaction between the metal and inorganic layers with the resultant formation of pockets 9 of reaction products. The barrier layer which normally prevents such reaction permits interaction in the areas struck by the radiation. The barrier layer may also react or become absorbed into the reaction products in the irradiated areas. A backing layer 1 is preferably provided. The unreacted portions of layer 4 are then removed, e.g. by chemical etching, Fig. 5, and the unexposed portions of the barrier layer removed by etching, mechanically or by thermal sublimation. An electric field may be applied to the structure during exposure to promote interaction of the layers. The metal layer 2 may then be removed by etching where not protected by the reaction products 9. The products 9 may then be removed mechanically, by etching or thermally. The layer 4 may be gaseous or liquid rather than solid as shown in Fig. 3. A further layer may separate the layers 1 and 2 and this layer may also be selectively removed by etching and the overlying areas of layer 2 also removed. Exemplified for layer 2 are silver, copper and metal alloys, for layer 3 are Au, Zn, Cd, Mg, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Ti, V, Cr, Mn, Fe, Co, Ni, Mo, Ta, W, Os, Ir, Pt and their alloys, oxides, sulphides, tellurides, halides, and phosphides, polyethylene, polystyrene, polypropylene, polymethacrylate, polycarbonate, polyvinyl chlorides, polytetrafluoroethylene, epoxy resins, colophony and anthracene, for layer 4 are given sulphur and selenium and compounds thereof (specific compounds are listed). The layers may be deposited by oxidation of the metal layer, application in vacuo, chemical precipitation, dipping or pouring. The radiation may be U.V., I.R., visible, X-rays or electronic fluxes. Laser illumination is described for the production of holographic patterns and examples of specific laser sources are given. The layer 4 may be arsenic trisulphide or germanium diselenide and may be removed after exposure with potassium or sodium hydroxide. If the barrier layer is germanium disulphide this will also be removed in the unexposed areas by KOH. Unprotected areas of metal layer 2 may be removed with H 2 SO 4 , HNO 3 , HF, muriatic acid, H 2 SO 4 + K 2 Cr 2 O 7 . If the barrier layer 3 is of metal these acids may be used to remove this layer. If the barrier layer is a glassy chalcogenide it may be removed with KOH, NaOH, NH 4 OH. If the layer 3 is an organic material it may be removed with benzene, acetone, alcohol, ether, carbon tetrachloride or turpentine. The pockets 9 of reaction products may be removed with ammonium hydroxide. A number of specific examples of layer compositions and suitable etching agents therefor are given. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4492739-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4492738-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4496634-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4500609-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4498923-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4498925-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4498924-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4477324-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4498926-A |
| priorityDate | 1975-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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Total number of triples: 53.