http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1490798-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1405097723ce17f61be9a9b845a3431d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-00 |
| filingDate | 1975-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1977-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1490798-A |
| titleOfInvention | Method for diffusing impurities in a substrate |
| abstract | 1490798 Solid state diffusion process SILECSEMI-CONDUCTEURS 19 Feb 1975 [20 Feb 1974] 6958/75 Heading H1K A doped region 14 is formed in a substrate 10, of single crystal Si, by diffusion of a dopant such as B or P through a window 12 in a silica masking layer 11 and through an overlaying layer 13 of polycrystalline Si which allows rapid diffusion of the dopant therethrough and which is substantially chemically inert with respect to the substrate 10, the masking layer 11 and the dopant. The layer 13 serves to protect the layer 11 against the deleterious effect of glasses formed during the diffusive process. The dopant is preferably deposited prior to diffusion by "painting" on a solution of its oxide in a solvent such as ethoxyethanol, and heating to evaporate the solvent. The portion of the layer 13 overlying the window 12 may be retained as part of an electrical contact. |
| priorityDate | 1974-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.