http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1443434-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e06263fb2e3b4a6ea9cb3486d0deb09 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-165 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-119 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G04F5-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G04F5-16 |
| filingDate | 1973-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1976-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1443434-A |
| titleOfInvention | Semiconductor devices |
| abstract | 1443434 Electronic timepieces MULLARD Ltd 11 Oct 1973 [22 Jan 1973] 3173/73 Heading G3T [Also in Division H1] Timers are provided in which the charge state of a charge-storage region of a semi-conductor device is varied with time under the influence of the radio-active decay of an element associated with the device. The devices described are IGFETs in which charge on a charge-storage region of the gate is varied with time by the #-decay of an element incorporated in the gate to yield a product which is stable or which has a long half-life. α-emitters may instead be used. Fig. 1 shows a p-channel depletion -mode silicon device with thermal oxide 3 and deposited silica 4, 5. The gate electrode 6 is of high conductivity polycrystalline silicon or of molybdenum. Radio-active silicon, nickel, or tritium is ion-implanted in a region 12 at the top of the gate either before or after the provision of a potential-equalizing metal layer 13. Layer 13 and ohmic source and drain contacts 9, 10 are of aluminium. The diffused source and drain could be replaced by surface barriers. Use of either <SP>32</SP> 14 Si or <SP>63</SP> 28 Ni in region 12 enables the transistor to be used for ca 10 years at a substantially constant rate of change of gate charge. An initial gate charge, which in some operational modes may be replenished to reset the timber, may be provided by avalanching the source or drain junction to inject hot carriers into the gate storage region. In other cases tunnel charging may be used. The metallization 13 may be used in charging. There need be no gate electrode since charge may be stored at e.g. an oxide-nitride interface in "gate" insulation. The radio-active implant is placed so as not directly to influence the semi-conductor, and to improve this isolation a conductive gate electrode may extend on to thicker field insulation and the radio-active element be there provided. Uses envisaged are for timers operating over seconds, hours, days, months or years e.g. electronic watches, washing machine and cooker timers, and time release locks on bank vaults and strongrooms. The amount of radio-active element and its nature (half-life) are chosen to fit the application. The device may form part of an integrated circuit or part of a CCD or BBD or other charge transfer structure. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4676661-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/IT-UD20120197-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014080272-A1 |
| priorityDate | 1973-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.