http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1385227-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b5ee93d55e837563f1cc5509aca8042 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 1972-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1975-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1385227-A |
| titleOfInvention | Electronic control devices |
| abstract | 1385227 Semi-conductor devices ENERGY CONVERSION DEVICES Inc 28 March 1972 [30 April 1971 27 Sept 1971] 11662/72 Heading H1K A device comprising a semi-conductor body of material which is amorphous in a certain state of operation of the device disposed between a pair of primary electrodes, and an electronemitting electrode separated from one of the primary electrodes by an insulating layer, the arrangement being such that with a suitable energizing voltage across the layer electrons flow from the emitting electrode through the insulating layer into the semi-conductor. The insulating layer may be of alumina from 70- 250 A thick, the hot electrons passing from the alumina into the amorphous material directly via a hole in the electrode or through the thickness of the electrode, which is typically 70- 250 when using molybdenum. The amorphous material may be one of the threshold or memory materials described in Specifications 1,070,411 and 1,070,412 or a material such as arsenic trisulphide or triselenide exhibiting neither of these properties. The controlling effect of the hot electrons may be enhanced by constructing the pair of electrodes so as to block entry of normal electrons and holes as by forming oxide at their interfaces with the amorphous material. A matrix of devices may be formed with the X and Y conductors constituting the two electrodes of the electron injectors. Where the amorphous material is of threshold or memory type the device exhibits a switching characteristic between the pair of electrodes, the voltage at which switching from the high to low resistance states occurs being varied by the hot electron current injection, as is the I-V characteristic in the high resistance condition. In the threshold device the holding current required is also varied. |
| priorityDate | 1971-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.