http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1372592-A
Outgoing Links
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| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49572 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-86 |
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| filingDate | 1971-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1974-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1372592-A |
| titleOfInvention | Connector leads for electronic components |
| abstract | 1372592 Making semi-conductor connectors HONEYWELL INFORMATION SYSTEMS ITALIA SpA 5 Nov 1971 [5 Nov 1970] 51630/71 Heading B3A [Also in Division H1] Beam leads for electronic components are made by affixing one face of a metallic foil to one face of a film of photosensitive material, selectively removing portions of the metallic foil to form a set of beam leads on the photosensitive film and selectively exposing and chemically treating the other face of the photosensitive film to produce an aperture over which one end of each beam lead projects. A continuous process embodying the invention starts with aluminium foil 51 on a drum 53, Fig. 7, and a laminate 52 of polyethylene, Riston (Registered Trade Mark) solid photoresist and polyester on a drum 54. The polyethylene layer 55 is stripped from the laminate by roller 56 and the remaining layers are heated at 57 to permit pressure rollers 58, 59 to laminate the aluminium foil to the Riston layer. The aluminium surface is then smeared with photoresist 62 and the strips are passed with an intermittant motion through an exposure station 63 where masks 64 and 65 respectively define the beam leads and the aperture. The photoresist is developed at 68 and the aluminium etched at 69. After stripping of the exposed photoresist at 70, the polyester layer is removed and the Riston developed at 72 to form the aperture 82, Fig. 8, over which the beam leads project. A semi-conductor chip or other circuit is located in the aperture 82 and the contacts thereof are ultrasonically welded to the beam leads. The chips, after being tested at 74 and after duds have been punched out at 75, pass to packing or storage. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4829666-A |
| priorityDate | 1970-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.