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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-45
filingDate 1972-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 1974-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-1362305-A
titleOfInvention Diode array target for a camera tube
abstract 1362305 Image pick-up tubes; semi-conductor devices NIPPON HOSO KYOKAI 6 March 1972 [8 March 1971] 10267/72 Headings H1D and H1K A multi-diode target electrode comprises an n-type substrate 1 coated with insulation 2 in which an array of apertures is formed, and a layer 3 of high sheet resistance semi-conductor which forms the diodes and also serves to dissipate charge which would otherwise accumulate on the insulation 2. The substrate is preferably silicon, but may be gallium arsenide or phosphide, zinc selenide, indium antimonide, or germanium. The insulation 2 is preferably silicon dioxide or silicon nitride and may be formed by vapour deposition or by oxidizing a silicon substrate. The layer 3 may be cadmium telluride or sulphide, antimony or arsenic trisulphide or triselenide, gallium arsenside, or lead monoxide. In one example the substrate is of 10 ohm-cm. silicon 15 microns thick with a silicon dioxide coating 4000-8000 A thick in which are formed apertures 6 microns in diameter at a pitch of 15 microns. The layer 3 is cadmium telluride deposited from the vapour to a thickness of 1000-2000 Š. This has a dark current of 20-30 nA and a resolution of about 480 television lines.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2354631-A1
priorityDate 1971-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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