| abstract |
1362136 RF transistor housing COMMUNICATIONS TRANSISTOR CORP 3 March 1972 [8 March 1971] 10038/72 Heading H1K The RF transistor package of Fig. 1, has input and output sections of solid dielectric strip line respectively connected to external input 10 and output 20 strip leads. The transistor 25 is bonded at its collector surface to the output section. A wire 24 connected to the common conductor of the strip line sections is seated in the gap between input and output sections and serves as a terminal point for a plurality of parallel wires connected to bonding areas of that electrode of the transistor common to input and output circuits. A further plurality of wires, interspaced with the first, is bonded between the remaining electrode of the transistor and the input section. The strip line sections are mounted on a fully metallized ceramic disc 5 itself bonded to a metal stud 3. A hermetic ceramic cover 28 is bonded to the structure by glass/epoxy resin mixture. Two leads 19, 21 (Fig. 2, not shown) extend at right angles to the leads 10, 20 and may be used to ground the common conductor to areas on a printed circuit panel 22. Fig. 5, shows the central section of a modified transistor package having a transistor with contacts on one surface only and flipchip bonded to the strip line section 14, 15 and to the common connector 24. A heat-sinking beryllia wafer 42 is arranged as shown to provide a thermally conductive pattern from the collector region to the metal stud via ceramic disc 5. |