http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1356591-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-958 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45589 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45591 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate | 1971-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1974-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1356591-A |
| titleOfInvention | Coating of semiconductor crystals |
| abstract | 1356591 Coating from the gas phase; coating with glass SIEMENS AG 24 May 1971 [26 May 1970] 16655/71 Headings C1A and C1M [Also in Divisions C7 and H1] A method of depositing material by reaction of two gaseous components on a semi-conductor crystal to serve as a mask, passivation, electrode or diffusion source comprises exposing the heated crystal in a reaction chamber containing a first of said components and supplying the second component to the chamber, immediately adjacent the crystal surface, so that the concentration of said second component in the body of the chamber is sufficiently low to avoid deposit of the material except on the crystal. The method may be used for depositing oxides, nitrides, sulphides and pure metals on silicon, germanium or A III B V compounds. Preferably the second gaseous component comprises from 0À1 to 0À5% by volume of the gas in the chamber. Details are given of processes for depositing arsenic trisulphide by reacting arsenic and hydrogen sulphide, antimony trisulphide by reacting antimony trimethyl and hydrogen sulphide, and a glass consisting of mixed oxides of germanium silicon and arsenic by reaction of the hydrides of these elements and air. The second gaseous compound suitably diluted with inert gas is fed into steel chamber 4 via a nozzle 9 which is moved longitudinally and reciprocated transversely to bring it successively over each of semi-conductor wafers 16 disposed on a heated plate 7. The first reactant gas is fed in via ports 5 and 6. Specification 1,281,298 is referred to. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4468685-A |
| priorityDate | 1970-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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Total number of triples: 33.