http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1291038-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 1971-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bff3612f1926eae6a7f4d1af7d6364cf |
| publicationDate | 1972-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1291038-A |
| titleOfInvention | A process for etching chromium |
| abstract | 1291038 Etching INTERNATIONAL BUISNESS MACHINES CORP 21 June 1971 [2 Sept 1970] 28905/70 Heading B6J A process for etching Cr comprises exposing the Cr to an etching solution containing Ce IV ions and ferric ions. The chromium may be vacuum deposited onto glass, covered with photoresist, selectively exposed, developed and etched using a solution of 1 to 4% by weight of cerric sulphate, 0.8 to 3% ferric sulphate and enough acid to give a pH value less than 2.0 and preferably less than 0.2. The acid may be nitric, hydrochloric, sulphuric, perchloric or acetic. Other ferric and ceric salts may be used such as ceric ammonium nitrate. The resultant chromium film mask on the glass may be used in the photofabrication of a semiconductor device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3920081-A1 |
| priorityDate | 1970-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.