http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1290491-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B13-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 1969-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1972-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1290491-A |
| abstract | 1290491 Silicon nitride and silicon oxide films T YAMAZAKI 3 Oct 1969 [3 Oct 1968] 48750/69 Heading C1A An electrically insulating or semi-conductive film is deposited on a substrate by a gas phase reaction or by a solid phase/gas phase reaction and a body of catalytic material is located at a distance of 1 mm. to 1 metre from the substrate surface, said catalytic material being Pt, Pd, reduced nickel, cobalt, chromium, titanium vanadium molybdenum tantalum, aluminiumnickel alloys, stainless steel, platinum silicon alloys, or oxides thereof, alumina, silica gel, and mixtures thereof; and the reactant gases are brought into contact with the body of catalytic material and thereby chemically activated, said reactant gases in (a) the gas phase reaction containing a hydride, nitride, or oxide and a source of silicon or other metallic element of the insulating or semi-conductive film to be formed and in (b) the gas phase/solid phase reaction being oxygen, water vapour, carbonic acid gas, hydrogen peroxide or nitrogen dioxide, the reaction of the chemically activated gases with each other or with the substrate causing the deposition or formation of the desired film on the surface of the substrate. The substrate may be a single crystal substance selected from Si, Ge, sapphire and GaAs, or a non-crystalline substance selected from ceramics or a film of amorphous SiO 2 or Si 3 N 4 . The catalyst may be particulate, or may be a gauze or net. In the preferred embodiment the distance between catalyst and substrate is 1 mm. to 10 cm. SiO 2 may be formed using SiH 4 , SiHCl 2 , and SiCl 4 , with steam, CO 2 , H 2 O 2 or N 2 O 4 . Si 3 N 4 may be formed using SiH 4 , SiCl 4 , with NH 3 or N 2 H 4 . a layer of SiO 2 may be formed by reacting O 2 , water vapour, hydrogen peroxide, N 2 O 4 or CO 2 with a silicide stain on a silicon substrate. A layer of Si 3 N 4 may be formed by reacting NH 3 or N 2 H 4 with a similar stain. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2148328-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4835005-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2555614-A1 |
| priorityDate | 1968-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.