http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1202082-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb4e12cfce14594a56afbddba2abf617 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-36 |
| filingDate | 1967-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1970-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1202082-A |
| titleOfInvention | Semiconductor devices |
| abstract | 1,202,082. Semi-conductor devices. MICROWAVE ASSOCIATES Inc. 28 Sept., 1967 [10 Oct., 1966], No. 44310/67. Heading H1K. A semi-conductor device such as a silicon varactor or avalanche mode diode includes a semi-conductor body 12 containing at least one junction situated relatively close to one surface, a rigid conductive heat sink 10 ohmically bonded to that surface, and a resilient terminal 16 ohmically connected to the opposite surface. In the form shown the silicon body 12 is bonded to the copper alloy heat sink 10 through a gold preform 17 which may alternatively be dispensed with. Similarly a molybdenum plate 15 between the body 12 and the resilient terminal 16 may be excluded, in which case the terminal 16 may be either bonded or non-bonded to the body 12. External contact is made to the terminal 16 through nickel bellows 23. The terminal 16 is of laminated construction comprising layers of copper, gold and tin, and is bonded at the four ends of its cruciform structure to the upper end of a ceramic or glass sleeve 18 through a washer 20. The semiconductor body 12 may be shaped as shown with one or more junctions in the mesa portion adjacent the heat sink 10. Alternatively a planar device may be used. The junction may be formed by diffusion or epitaxy, or may be a heterojunction. |
| priorityDate | 1966-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.