http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1198570-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4ff9ddf728a7e1a0b36c9cc38b89ad6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J29-456 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-45 |
| filingDate | 1968-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ae26383a3b4cd3f3834dd87073717d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1b42c7df6fda02f821498f4f9616c56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_014c87826ba57c4dcf2b09145878aa94 |
| publicationDate | 1970-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1198570-A |
| titleOfInvention | A Photoconductive Target. |
| abstract | 1,198,570. Photo-conductive targets; cathoderay tubes. TOKYO SHIBAURA ELECTRIC CO. Ltd. 16 July, 1968 [17 July, 1967], No. 33796/68. Headings H1D and H1K. A vidicon target has on its transparent electrode a first layer at least 0À5Á thick and consisting of or containing cadmium selenide and a further layer not greater than 0À6Á thick and of high resistance of another semi-conductor material. This further layer permits the entry of electrons to the target by locally providing a sharp potential gradient on the scanned surface of the first layer and cuts down the after-image by reducing the number of trapping levels otherwise present there. In an embodiment a glass window is provided with a transparent electrode on to which is evaporated a 1Á layer of cadmium selenide containing a substantial quantity of cadmium chloride and a doping quantity of cuprous chloride. The layer is annealed in nitrogen and then heated in a selenium atmosphere to increase its resistivity. A 0À4 Á layer of antimony trisulphide is then provided by evaporation. Other dopants which may be included in the selenide layer are Ag, Au, Tl, In, Ga, Al, Te, Sb, Bi, Pb, Sn, halogens, alkali metals, and alkaline earth metals. The following semiconductors may be used instead of or mixed with the antimony trisulphide: -Sb 2 Se 3 , As 2 Se 3 , As 2 S 3 , Bi 2 S 3 , Bi 2 Se 3 , CdTe, PbO, Se, ZnS and ZnSe. This layer may be made porous or solid depending on the resistivity of the basic material and the layer may consist of two or more sublayers. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-3816787-A |
| priorityDate | 1967-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.