http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1193519-A

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filingDate 1967-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_573615860e16f2718fb8cb1db0ce352c
publicationDate 1970-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-1193519-A
titleOfInvention Semiconductor Devices
abstract 1,193,519. Semi-conductor devices. TEXAS INSTRUMENTS Ltd. 31 Aug., 1967, No. 39914/67. Heading H1K. At least one broad, flat lead 8 or 9 electrically connected to a semi-conductor body 1 is provided with longitudinal slits 13 defining portions 14 which are displaced from the general plane of the lead 8 or 9, e.g. as in Fig. 2. These portions 14 are embedded in insulating material 12 comprising part of the encapsulation. In the transistor shown the body 1 is mounted on a metallized region 4 of an insulating support pillar 2, to which region is bonded a collector lead 6. The broad leads 8, 9 are bonded to opposite halves of a second metallized region 3 to which emitter regions of the body 1 are connected by wires 11. A bare wire 10 is connected to a bare lead 7, which is also bonded to a third metallized region 5 of the support pillar 2. The leads 6-9 may be of silver or gold-plated copper, and may initially comprise radially inwardly directed arms of a frame (16), Fig. 4 (not shown). After encapsulation the periphery of the frame (16) is detached to leave separate leads. The insulation 12 is preferably of a moulded potting material such as an epoxy or silicone resin, but may comprise part of a glass/metal or ceramic/metal seal. One, or more than two, broad leads having slits 13 may be provided in a single device.
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Total number of triples: 27.