http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1155590-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate | 1966-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1969-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1155590-A |
| titleOfInvention | Improvements in or relating to Optical-Electronic Semiconductor Systems |
| abstract | 1,155,590. Electroluminescence. SIEMENS A.G. 3 Nov., 1966 [4 Nov., 1965; 30 Sept., 1966], No. 49316/66. Heading C4S. [Also in Division H1] An optical-electronic system comprises a semi-conductor light transmitter and a semiconductor light receiver cemented together via an optical link of high resistance semi-conductor material with a refractive index lying within 20% of the refractive indices of the transmitter and receiver. Fig. 4 shows a gallium arsenide photo emissive diode with electrodes E 2 E 1 to N region N A and P region P A respectively the latter being formed by alloying a Zn-Sn pellet to the N-type body. The optical link L consists of chromium doped (10<SP>16</SP> atoms per c.c.) semi-insulating gallium arsenide (10<SP>8</SP> ohm cms.) cemented by a 1 Á thick low melting point glass layer K to a silicon photo sensitive diode B with electrodes E 3 and E 4 to the P and N regions. The glass layer may consist of arsenic selenide or arsenic sulphide glass to give a high refractive index or alternatively organic adhesives may be used. The band gap of the photo-emissive diode may be reduced by adding In 56, InAs, Ga 56 or InP and the band gap of the optical link material may be increased by adding AlP, AlAs, GaP or AlSb, and this layer may be produced by epitaxial deposition on the photo emissive body N A . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2120457-A |
| priorityDate | 1965-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.