http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1142110-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-167 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-16 |
| filingDate | 1967-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1969-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1142110-A |
| titleOfInvention | Improvements in or relating to optical-electronic systems |
| abstract | 1,142,110. Opto-electronic device. SIEMENS A.G. 29 Sept., 1967 [30 Sept., 1966], No. 44345/67. Heading H1K. A light emitting diode and/or a photodiode is mechanically and optically coupled to an optical conductor by a layer of low melting- point adhesive having a thickness of the same order of magnitude as the wavelength of the light passing to or from the diode. A silicon photo-diode A is coupled to a light-emitting GaAs diode B by a block L of arsenic sulphide, arsenic selenide or semi-insulating GaAs by layers K 1 and K 2 of glass or organic adhesive. Optionally a vapour-deposited metal layer is provided between the layers K 1 and K 2 and the diodes A and B respectively. |
| priorityDate | 1966-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.