http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-1126986-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73358b7d52b62e597168cae23cc15d97 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-16 |
| filingDate | 1966-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1968-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | GB-1126986-A |
| titleOfInvention | Improvements in hybrid microcircuits |
| abstract | 1,126,986. Semi-conductor devices; circuit assemblies. SOC. EUROPEENNE DES SEMICONDUCTEURS. 2 May, 1966 [30 April, 1965], No. 19250/66. Headings H1K and H1R. A hybrid microcircuit is made by depositing passive components and conductors 6, 9 on one face of a first insulating plate 19, and locating semi-conductor devices such as transistors 1, 2 in cavities 21, 22 in a second insulating plate 20; the two plates 19, 20 are placed together, planar terminal areas on devices 1, 2 being, urged against connection areas on plate 19 by molybdenum springs 23, 24 in cavities 21, 22, and the plates are sealed together by. the insertion of a peripheral frame 25, of, e.g. "Kovar" (Registered Trade-Mark), followed by heating in a rare gas atmosphere. A plurality of "Kovar" tapes (or wires) 13 are sealed through plate 19, which may be of glass or ceramic, preferably during the formation of. the plate, and are levelled off flush with the internal face of the plate. The invention is described with reference to the manufacture of a transistorized two-stage amplifier (Fig. 1, not shown). Passive components and connections, which, are deposited on. plate 19 by evaporation in vacuo, comprise resistors of Ni-Cr, alloy, conductors of Cr or Ni-Cr having a coating of Au thereon, and capacitors of which the dielectric is-formed by SiO. The terminal areas ontransistors 1, 2 areformed of Cr or Ni-Cr coated with. Au, and may be bonded to adjacent connection areas on plate 19 by heating. The plates may be made of-soft glass, and sealed together with an insert of copper-clad: Ni-Fe alloy wire. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5089936-A |
| priorityDate | 1965-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.