| abstract |
The invention relates to an infrared photodetector (10) comprising a stack of layers (16, 18, 20, 22, 24) on a substrate (14, 26) including an active zone (20) made of organic semiconductor materials adapted to convert radiation. infrared sensor (28) into an electrical signal and comprising, in said stack and / or on the substrate, a single layer (12) for at least partial filtering of the visible light. |