http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3040108-A1

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filingDate 2015-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d27edad7afc5084aeb31965b863edf1c
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publicationDate 2017-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-3040108-A1
titleOfInvention METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE WITH TEMPORARY DIRECT COLLAGE OPERATING A POROUS LAYER
abstract The invention relates to a method for manufacturing a semiconductor structure, comprising the steps of: direct bonding of a substrate to be handled (1) with a handle substrate (2) via a bonding layer ( 3) covering the handle substrate, to form a temporary structure capable of being subjected to technological steps; and dismantling the temporary structure at the level of the bonding layer to separate the substrate to be handled (1) from the handle substrate (2), characterized in that it comprises a preliminary step of depositing the bonding layer (3). ) on the handle substrate (2) and / or on the substrate to be handled (1), the bonding layer (3) being made of a porous material formed of an inorganic matrix and organic compounds connected or not to this matrix, and in that the disassembly step is carried out by providing a disassembly thermal budget to the intermediate structure (6, 16), said contribution resulting in a spontaneous disassembly of the temporary structure intervening at the level of the bonding layer.
priorityDate 2015-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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