| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-18 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate |
2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd5067fc26c23f1e04deb4f590c4ef1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03afbb22c2c76902ab3cd4bf4dc53148 |
| publicationDate |
2014-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-3007574-A1 |
| titleOfInvention |
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR COMPONENT HAVING SUCH SEMICONDUCTOR STRUCTURE |
| abstract |
The invention relates to a method for manufacturing at least one semiconductor structure comprising the following steps: providing a substrate (110) comprising at least one semiconductor (111) silicon surface; forming an amorphous silicon carbide layer (120) in contact with at least a portion of the semiconductor (111) silicon surface; forming at least one semiconductor structure in contact with the silicon carbide layer (120), said structure having at least one portion, said contact portion, in contact with the surface of the silicon carbide layer (120); ), which contains gallium. The invention also relates to a component (100) comprising a structure formed with such a method. |
| priorityDate |
2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |