| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5a65afd2c0d431385c1f67a0660a28e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8d890661721e98c95e351db44a18b6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81bd580e9ca17399b7ea4a5987e8f4ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c854ffa8ed7e9ca24880b9356162ca99 |
| publicationDate |
2014-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-3005201-A1 |
| titleOfInvention |
METHOD FOR MAKING A METAL GRID MOS TRANSISTOR, ESPECIALLY A PMOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT |
| abstract |
The method for producing at least one MOS transistor comprises a formation of doped source and drain regions comprising a dopant activation annealing (RC) and, prior to said formation of the source and drain regions, a formation above a substrate of a dielectric region (2) and forming a gate (3) having a formation of a metal gate region (30). The formation of the metal gate region (30) comprises forming a layer of a first material (301) for decreasing the absolute value of the threshold voltage of the transistor, and a configuration of a portion (302) of the metal gate region so as to also form a diffusion barrier over said layer of the first material. |
| priorityDate |
2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |