| abstract |
The invention relates to a ferroelectric memory device comprising at least one layer which comprises a ferroelectric polymer, and at least two electrodes on either side thereof, the ferroelectric polymer being of general formula P (VDF-XY), in which VDF represents vinylidene fluoride units, X represents trifluoroethylene or tetrafluoroethylene units, and Y represents units derived from a third monomer, the molar proportion of Y units in the polymer being less than or equal to 6.5. %. |