| abstract |
The present invention relates to a wafer (10) of monolithic silicon with vertical multi-junctions (2) having, in at least one vertical section plane, an alternation of n-doped zones (110) and zones (120). p-doped, each of the zones extending over the entire thickness (e) of the wafer, characterized in that: - said n-doped (110) and p-doped (120) zones each have, in the plane of section, a width (L1, L2) of at least 1 mm; the n-doped zones (110) have a concentration of oxygen-based thermal donors distinct from that of the p-doped zones (120); and - said n-doped zones (110) and said p-doped zones (120) are separated from each other by electrical isolation zones (130). It also relates to methods of manufacturing such a wafer. |