http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3000609-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1075 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 |
| filingDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b8b0ca9e7a85f1423dc307ecc0ea0ee |
| publicationDate | 2014-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-3000609-A1 |
| titleOfInvention | SEMICONDUCTOR STRUCTURE OF THE AVALANCHE PHOTODIODE TYPE AT HIGH SIGNAL TO NOISE RATIO AND METHOD OF MANUFACTURING SUCH PHOTODIODE |
| abstract | The invention relates to a semiconductor structure (1) of the avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and comprising a first semiconductor zone (210) adapted for the absorption of electromagnetic radiation, a second zone (310) adapted to provide carrier multiplication and a third semiconductor region (410) in contact with the second semiconductor region (310). The second zone (310) has at least two sub-portions (321, 322) with the second sub-portion (322) which is adapted to have a higher mean carrier multiplication rate than that of the first sub-portion ( 321. The invention also relates to a method of manufacturing such a structure (1). |
| priorityDate | 2012-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.