| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8d7a963516c60934729f785cfe5699f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C21-008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C3-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-21 |
| filingDate |
2012-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_353ad577891f6fe2a937acf946397028 |
| publicationDate |
2014-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2993388-A1 |
| titleOfInvention |
MICROELECTRONIC DEVICE WITH PROGRAMMABLE MEMORY |
| abstract |
The present invention relates to a programmable memory microelectronic device comprising at least: a first electrode (1) and a second electrode (9) between which is positioned a first layer of doped chalcogenide material (5) comprising an atomic concentration n1 doping metal element d1, characterized in that the device further comprises a second layer of doped chalcogenide material (8), positioned between the first electrode (1) and the second electrode (9), the second layer of doped chalcogenide material (8) comprising a atomic concentration n2 in doping metal element d2, the atomic concentration n2 being strictly lower than the atomic concentration n1. |
| priorityDate |
2012-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |